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esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 1/18 3w mono filter-less class-d audio amplifier features supply voltage range: 2.5 v to 5.5 v support single-ended or differential analog input low quiescent current low output noise low shut-down current short power-on transient time internal pull-low resistor on shut-down pins short-circuit protection over-temperature protection loudspeaker power within 10% thd+n 1.78w/ch into 8 w loudspeaker >3w/ch into 4 w loudspeaker loudspeaker efficiency 93% @ 8 w , thd+n=10% 85% @ 4 w , thd+n=10% msop-8l, tdfn-8l and 0.4mm ball pitch wlcsp-9l packages integrated feedback resistor of 300k w applications monitor audio pda portable multimedia devices notebook computer mobile phone description the AD51652 is a 3.0w mono, filter-less class-d audio amplifier. operating with 5.0v loudspeaker driver supply, it can deliver 3.0w output power into 4 w loudspeaker within 10% thd+n or 2.6w at 1% thd+n. the AD51652 is a mono audio amplifier with high efficiency and suitable for the notebook computer, and portable multimedia device. functional block diagram pwm generator loudspeaker driver + - + - ~150k ~150k overload, voltage & thermal protection -wave generator ~300k vdd inp inn vop von sd r in r in c in c in differential input + - gain=300k /r in gnd
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 2/18 typical application circuit AD51652 filterless classd vdd inp inn vop von sd r in c in gnd c s2 on off 150k 1uf 0.1uf r in c in 150k 1uf c s1 2.2uf note. gain=2 v/v
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 3/18 pin assignments msop-8 order information AD51652-mh08nrr mh08 msop-8 package nrr rohs & halogen free rating: -40 to 85c package in tape & reel tdfn-8 order information AD51652-fh08nrr fh08 tdfn-8 package nrr rohs & halogen free rating: -40 to 85c package in tape & reel wlcsp-9 order information AD51652-wl09nrr wl09 wlcsp-9 package nrr rohs & halogen free rating: -40 to 85c package in tape & reel
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 4/18 pin description pin name msop-8 tdfn-8 wlcsp-9 io type description sd 1 1 c2 i shutdown AD51652 (low active logic) inp 2 3 a1 i positive differential input nc 3 2 n/a nc no internal connect inn 4 4 c1 i negative differential input vop 5 5 c3 o positive output vdd 6 6 b2 p power supply gnd 7 7 a2, b3 g power ground von 8 8 a3 o negative output thermal pad n/a 9 n/a g must be connected the package thermal pad to pcb thermal land. available package package type device no. ja ( o c/w) exposed thermal pad msop-8 190 no tdfn-8 (3x3mm) 45.8 yes wlcsp-9 AD51652 128 no absolute maximum ratings symbol parameter min max unit vdd supply for analog cells & loudspeaker driver -0.3 6.0 v input pins voltage -0.3 5.5 v t stg storage temperature -65 150 o c t j junction operating temperature -40 150 o c recommended operating conditions symbol parameter min max unit vdd supply for analog cells & loudspeaker driver 2.5 5.5 v v ih high-level input voltage 1.3 - v v il low-level input voltage - 0.35 v t j junction operating temperature -40 125 ta ambient operating temperature -40 85
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 5/18 general electrical characteristics (t a =25 ) electrical characteristics and specifications for l oudspeaker gain= 2 v/v, load=8 w , f in =1 khz, c s1 =2.2uf, c s2 =0.1uf, t a =25 (unless otherwise noted) symbol parameter condition min typ max unit thd+n = 10 % 1.78 w vdd=5.0v thd+n = 1 % 1.44 w thd+n = 10 % 0.91 w vdd=3.6v thd+n = 1 % 0.74 w thd+n = 10 % 0.43 w p o rms output power vdd=2.5v thd+n = 1 % 0.35 w vdd=5.0v, po=1.0w 0.035 % vdd=3.6v, po=0.5w 0.039 % thd+n total harmonic distortion plus noise vdd=2.5v, po=0.2w 0.058 % snr signal to noise ratio vdd=5.0v, po=1.0w 98 db psrr power supply rejection ratio vdd=3.6v, v ripple =200mvpp inputs ac grounded with ci=2 m f f=217 hz 74 db cmrr common-mode rejection vdd=3.6v, v ic =1vpp, f=217hz 76 db v n output integrated noise (a-weighted) vdd=3.6v f in =20hz ~ 20khz 23 m v h efficiency (tdfn-8l) vdd=5v, thd+n=10% 90 % symbol parameter condition min typ max unit iq operating current vdd=sd=5v, output switching 3 ma ? i pd supply current during power-down mode vdd=5.5v; sd#=0 <1 ma v offset output offset voltage input ac grounded, vdd=2.5v ~ 5.5v < 1 5 mv tsd junction temperature for driver shutdown 165 o c thys temperature hysteresis for recovery from shutdown 20 o c f sw switching rate of loudspeakers driver 250 300 350 khz a v gain in r k w 270 in r k w 300 in r k w 330 v/v ton turn-on time vdd = 3.6 v 1.7 4 msec r sc loudspeaker short-circuit detect resistance vdd = 5.0 v 2.8 3.2 ohm ?
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 6/18 gain= 2 v/v, load=4 w, f in =1 khz, c s1 =2.2uf, c s2 =0.1uf, t a =25 (unless otherwise noted) symbol parameter condition min typ max unit thd+n = 10 % 3.2 w vdd=5.0v thd+n = 1 % 2.6 w thd+n = 10 % 1.63 w vdd=3.6v thd+n = 1 % 1.33 w thd+n = 10 % 0.74 w p o rms output power vdd=2.5v thd+n = 1 % 0.6 w vdd=5.0v, po=2.0w 0.039 % vdd=3.6v, po=1.0w 0.043 % thd+n total harmonic distortion plus noise vdd=2.5v, po=0.5w 0.068 % snr signal to noise ratio vdd=5.0v, po=1.8w 98 db psrr power supply rejection ratio vdd=3.6v, v ripple =200mvpp inputs ac grounded with ci=2 m f f=217 hz 77 db cmrr common-mode rejection vdd=3.6v, v ic =1vpp, f=217hz 76 db v n output integrated noise (a-weighted) vdd=3.6v f in =20hz ~ 20khz 22 m v h efficiency (tdfn-8l) vdd=5.0v, thd+n=10% 85 %
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 7/18 typical characteristics (gain= 2 v/v, unless otherw ise noted) total harmonic distortion + noise (thd+n) vs outpu t power (8 w ) 0.01 20 0.02 0.05 0.1 0.2 0.5 1 2 5 10 10m 5 20m 50m 100m 200m 500m 1 2 po - output power (w) thd+n (%) vdd=2.5v vdd=3.6v vdd=5v total harmonic distortion + noise (thd+n) vs outpu t power (4 w ) po - output power (w) vdd=2.5v vdd=3.6v vdd=5v 0.01 20 0.02 0.05 0.1 0.2 0.5 1 2 5 10 10m 5 20m 50m 100m 200m 500m 1 2 r load =4 f=1khz
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 8/18 total harmonic distortion + noise (thd+n) vs signa l frequency (5v/8 w ) thd+n (%) total harmonic distortion + noise (thd+n) vs signa l frequency (3.6v/8 w ) 0. 001 20 0. 002 0. 005 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 20k 50 100 200 500 1k 2k 5k 10k thd+n (%) frequency (hz) vdd=3.6v rload=8 f=1khz po=25mw po=125mw po=500w
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 9/18 total harmonic distortion + noise (thd+n) vs signa l frequency (2.5v/8 w ) thd+n (%) total harmonic distortion + noise (thd+n) vs signa l frequency (4 w )
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 10/18 power supply rejection ratio vs frequency (8 w ) prss (db) power supply rejection ratio vs frequency (4 w ) prss (db)
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 11/18 common mode rejection ratio vs frequency efficiency vs output power efficiency 0 10 20 30 40 50 60 70 80 90 100 0 0.5 1 1.5 2 2.5 3 3.5 output power (w) efficiency(%) rl=8ohm rl=4ohm
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 12/18 operation descriptions self-protection circuits (typical values are used below.) AD51652 has built-in over-temperature, overload and under-voltage detectors. (i) if the internal junction temperature is higher than 165 o c, the outputs of loudspeaker drivers will be disabled and connected to ground and the temperature hysteresis for AD51652 to return to nor mal operation is about 20 o c. the variation of protected temperature is around 10 %. (ii) to protect loudspeaker drivers from current da mage when the wires connected to loudspeakers are shorted to one another or short ed to gnd, circuits for the detection of output loading are built in the ad5165 2. for normal operation, loudspeaker resistance is larger than 3.2 w is required. otherwise, overload detectors may activate. once overload detector is a ctive, loudspeaker drivers will be disabled and at low state. AD51652 will be recovery from overload fault by pulling sd# down to low and back to high after r emoving the short. once the lines connected to loudspeakers are shorted to vdd, AD51652 will be burnt. (iii) when the vdd voltage is lower than 2.3v, ad51 652 will disable and loudspeaker drivers are at low state, cease AD51652 beside voltage detector circuit. when vdd becomes larger than 2.4v, AD51652 will return to normal operation. anti-pop design AD51652 is with anti-pop design. annoying pop sound s during initial power on and power down/up are suppressed. when one of the opera tions mentioned above is applied, AD51652 will internally generate appropria te control signals to suppress pop sounds. application circuit information input resistors (r in ) and input capacitors (c in ) the total gain of the audio amplifier (AD51652) is set by input resistor (r in ) according to the following equation (a). the perfor mance at low frequency (bass) is affected by the corner frequency (f c ) of the high-pass filter composed of input resistors (r in ) and input capacitors (c in ), determined in equation (b). ( ) ( ) a v v r k gain in l l l w = 300 ( ) ( ) b hz c r f in in c l l l p 2 1 = for differential audio signal application, the inpu t capacitors (c in ), for dc decoupling, are not required. when single-ended audio source is used, the input capacitors (c in ) are required.
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 13/18 cost effective application circuit for fully diffe rential input suggested application circuit for fully differenti al input suggested application circuit for single-ended inp ut
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 14/18 package outline dimensions msop-8l (118 mil) min max a 0.81 1.10 a1 0.00 0.15 b 0.22 0.38 c 0.13 0.23 d 2.90 3.10 e 2.90 3.10 e1 4.80 5.00 e l 0.40 0.80 0.65 bsc symbol dimension in mm
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 15/18 package outline dimensions tdfn - 8l (3x3 mm 2 ) min max a 0.7 0.85 option 1 min max a1 0 0.05 d2 1.60 2.50 a3 0.175 0.25 e2 1.35 1.75 b 0.25 0.35 option 2 d 2.95 3.05 d2 2.20 2.40 e 2.95 3.05 e2 1.40 1.70 e l 0.3 0.5 0.65 bsc dimension in mm exposed pad symbol dimension in mm
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 16/18 package outline dimensions wcsp - 9l (1.21x1.21 mm 2 ) min max a 0.536 0.634 a1 0.189 0.231 a3 0.022 0.028 d 1.190 1.230 e 1.190 1.230 b 0.234 0.286 e symbol dimension in mm 0.400
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 17/18 revision history revision date description 0.01 2013.11 draft version. 0.02 2014.03.12 draft version, updated mp version measurement data into. 0.03 2014.03.14 draft version, updated wcsp-9l package outline.
esmt preliminary AD51652 elite semiconductor memory technology inc. publication date: mar. 2014 revision: 0.03 18/18 important notice all rights reserved. no part of this document may be reproduced or dupli cated in any form or by any means without the prior permission of esmt. the contents contained in this document are believe d to be accurate at the time of publicat ion. esmt assumes no responsibility for any error i n this document, and reserves the right to change the produ cts or specification in this document without notice. the information contained herein is presented only as a guide or examples for the applicati on of our products. no responsibility is assumed by esmt for any infringement of patents, copyrights, or other i ntellectual property rights of third parties which may result from its use. no license, either express, implied or otherwise, is granted under a ny patents, copyrights or other intellectual property rights of esmt or others. any semiconductor devices may have inherently a cer tain rate of failure. to minimize risks associated with customer's applic ation, adequate design and operating safeguards aga inst injury, damage, or loss from such failure, should be provided by the customer when making appl ication designs. esmt's products are not authorized for use in criti cal applications such as, but not limited to, life support devices or system, where fail ure or abnormal operation may directly affect human lives or cause physical injury or property damage. if products described here are to be used for such kinds of application, purchaser must do its own quality a ssurance testing appropriate to such applications.

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